isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1105 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 80V (Min) ·Wide Area of Safe Operation ·High Power and High Reliability APPLICATIONS ·Designed for high power AF amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 15 A IB Base Current-Continuous 30 A PC Collector Power Dissipation @TC=25℃ 200 W Tj Junction Temperature 150 ℃ -65~150 ℃ B Tstg Storage Temperature Range isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1105 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ; IB= 0 80 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 5mA ; IC= 0 7 V VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A 2 V VBE(on) Base-Emitter On Voltage IC= 5A ; VCE= 4V 1.5 V ICBO Collector Cutoff Current VCB= 40V; IE= 0 30 μA hFE-1 DC Current Gain IC= 1A ; VCE= 4V 40 hFE-2 DC Current Gain IC= 5A ; VCE= 4V 40 Current-Gain—Bandwidth Product IC= 0.5A;VCE= 10V fT hFE-2 Classifications P O 40-80 60-120 isc Website：www.iscsemi.cn CONDITIONS MIN TYP. B MAX UNIT 120 1 MHz