Inchange Semiconductor Product Specification 2SC5417 Silicon NPN Power Transistors DESCRIPTION ・With TO-220F package ・High breakdown voltage ・High reliability APPLICATIONS ・For inverter lighting applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-220F) and symbol R O 体 T U 导 D 半 N O C 固电 I EM S E G N A INCH Absolute maximum ratings (Ta=25℃) SYMBOL VCBO VCEO VEBO PARAMETER CONDITIONS VALUE UNIT Collector-base voltage Open emitter 1200 V Collector-emitter voltage Open base 600 V Emitter-base voltage Open collector 9 V IC Collector current 3 A ICM Collector current-peak 6 A PC Collector power dissipation Ta=25℃ 2 TC=25℃ 25 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Inchange Semiconductor Product Specification 2SC5417 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A; IB=0 VCEsat Collector-emitter saturation voltage IC=1.5A; IB=0.3 A 1.0 V VBEsat Base-emitter saturation voltage IC=1.5A; IB=0.3 A 1.5 V ICBO Collector cut-off current VCB=600V; IE=0 10 μA ICES Collector cut-off current VCE=1200V; RBE=0 1.0 mA IEBO Emitter cut-off current VEB=9V; IC=0 1.0 mA hFE-1 DC current gain IC=0.1A ; VCE=5V 30 DC current gain IC=1.0A ; VCE=5V 10 hFE-2 CONDITIONS MIN TYP. MAX 600 UNIT V 50 R O 体 T U 导 D 半 N O C 固电 I EM S E G N A INCH Switching times ts Storage time 2.5 μs 0.15 μs IC=1.5A;IB1=0.3A ;IB2=-0.6A tf Fall time 2 Inchange Semiconductor Product Specification 2SC5417 Silicon NPN Power Transistors PACKAGE OUTLINE R O 体 T U 导 D 半 N O C 固电 I EM S E G N A INCH Fig.2 outline dimensions 3 Inchange Semiconductor Product Specification 2SC5417 Silicon NPN Power Transistors R O 体 T U 导 D 半 N O C 固电 I EM S E G N A INCH 4