Inchange Semiconductor Product Specification 2SB1194 Silicon PNP Power Transistors DESCRIPTION ・With TO-220Fa package ・High DC current gain ・High speed switching ・DARLINGTON ・Complement to type 2SD1633 APPLICATIONS ・For power switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-220Fa) and symbol 导体 半 电 固 SYMBOL VCBO VCEO VEBO M E S GE PARAMETER N A H INC Collector-base voltage Collector -emitter voltage Emitter-base voltage CONDITIONS Open emitter Open base Open collector R O T UC D N O IC Absolute maximum ratings(Ta=25℃) VALUE UNIT -100 V -100 V -7 V IC Collector current -5 A ICM Collector current-peak -8 A IB Base current -0.5 A PC Collector power dissipation Ta=25℃ 2 TC=25℃ 30 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Inchange Semiconductor Product Specification 2SB1194 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT Collector-emitter sustaining voltage IC=-0.2A; RBE=∞ Collector-emitter saturation voltage IC=-3A ;IB=-3mA -1.5 V Base-emitter saturation voltage IC=-3A ;IB=-3mA -2.0 V ICBO Collector cut-off current VCB=-100V; IE=0 -100 μA ICEO Collector cut-off current VCE=-100V; IB=0 -100 μA IEBO Emitter cut-off current VEB=-7V; IC=0 -5 mA hFE DC current gain VCEO(SUS) VCEsat VBEsat 导体 半 电 固 IC=-3A ; VCE=-3V Switching times ton tstg tf Turn-on time Fall time IC=-3A ;IB1=-IB2=-3mA VCC=-50V hFE Classifications Q P 1500-6000 4000-10000 1500 2 V 10000 R O T UC D N O IC M E S GE N A H INC Storage time -100 3.0 μs 5.0 μs 3.0 μs Inchange Semiconductor Product Specification 2SB1194 Silicon PNP Power Transistors PACKAGE OUTLINE 导体 半 电 固 R O T UC D N O IC M E S GE N A H INC Fig.2 Outline dimensions (unindicated tolerance: ±0.15 mm) 3