ISC 2SD1894

Inchange Semiconductor
Product Specification
2SD1893
Silicon NPN Power Transistors
・
DESCRIPTION
・With TO-3PFa package
・High DC current gain
・Low collector saturation voltage
・Complement to type 2SB1253
APPLICATIONS
・Power amplification
・Optimum for 40W high-fidelity output
applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
130
V
VCEO
Collector-emitter voltage
Open base
110
V
VEBO
Emitter-base voltage
Open collector
5
V
IC
Collector current
6
A
ICM
Collector current-peak
10
A
PC
Collector power dissipation
TC=25℃
50
W
3
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
Inchange Semiconductor
Product Specification
2SD1893
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdown voltage
IC=30mA ; IB=0
VCEsat
Collector-emitter saturation voltage
IC=5A ;IB=5mA
2.5
V
VBEsat
Base-emitter saturation voltage
IC=5A ;IB=5mA
3.0
V
ICBO
Collector cut-off current
VCB=130V; IE=0
100
μA
ICEO
Collector cut-off current
VCE=110V; IB=0
100
μA
IEBO
Emitter cut-off current
VEB=5V; IC=0
100
μA
hFE-1
DC current gain
IC=1A ; VCE=5V
2000
hFE -2
DC current gain
IC=5A ; VCE=5V
5000
Transition frequency
IC=0.5A ; VCE=10V;f=1MHz
fT
CONDITIONS
MIN
TYP.
MAX
110
UNIT
V
30000
20
MHz
1.4
μs
4.5
μs
0.8
μs
Switching times
‹
ton
Turn-on time
ts
Storage time
tf
Fall time
IC=5A; VCC=50V
IB1=-IB2=5mA
hFE-2 Classifications
Q
P
5000-15000
8000-30000
2
Inchange Semiconductor
Product Specification
2SD1893
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.30mm)
3