Inchange Semiconductor Product Specification 2SD1893 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-3PFa package ・High DC current gain ・Low collector saturation voltage ・Complement to type 2SB1253 APPLICATIONS ・Power amplification ・Optimum for 40W high-fidelity output applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 130 V VCEO Collector-emitter voltage Open base 110 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 6 A ICM Collector current-peak 10 A PC Collector power dissipation TC=25℃ 50 W 3 Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Inchange Semiconductor Product Specification 2SD1893 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=30mA ; IB=0 VCEsat Collector-emitter saturation voltage IC=5A ;IB=5mA 2.5 V VBEsat Base-emitter saturation voltage IC=5A ;IB=5mA 3.0 V ICBO Collector cut-off current VCB=130V; IE=0 100 μA ICEO Collector cut-off current VCE=110V; IB=0 100 μA IEBO Emitter cut-off current VEB=5V; IC=0 100 μA hFE-1 DC current gain IC=1A ; VCE=5V 2000 hFE -2 DC current gain IC=5A ; VCE=5V 5000 Transition frequency IC=0.5A ; VCE=10V;f=1MHz fT CONDITIONS MIN TYP. MAX 110 UNIT V 30000 20 MHz 1.4 μs 4.5 μs 0.8 μs Switching times ton Turn-on time ts Storage time tf Fall time IC=5A; VCC=50V IB1=-IB2=5mA hFE-2 Classifications Q P 5000-15000 8000-30000 2 Inchange Semiconductor Product Specification 2SD1893 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.30mm) 3