ISC 2SC5071

Inchange Semiconductor
Product Specification
2SC5071
Silicon NPN Power Transistors
DESCRIPTION
・With TO-3PN package
・High voltage
・High speed switching
APPLICATIONS
・For switching regulator and general
purpose applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Fig.1 simplified outline (TO-3PN) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
500
V
VCEO
Collector-emitter voltage
Open base
400
V
VEBO
Emitter-base voltage
Open collector
10
V
IC
Collector current
12
A
ICM
Collector current-peak
24
A
IB
Base current
4
A
PC
Collector power dissipation
100
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
TC=25℃
Inchange Semiconductor
Product Specification
2SC5071
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
V(BR)CEO
Collector-emitter breakdown voltage
IC=25mA ;IB=0
VCEsat
Collector-emitter saturation voltage
IC=7A ;IB=1.4A
0.5
V
VCEsat
Collector-emitter saturation voltage
IC=7A ;IB=1.4A
1.3
V
ICBO
Collector cut-off current
VCB=500V; IE=0
100
μA
IEBO
Emitter cut-off current
VEB=10V; IC=0
100
μA
hFE
DC current gain
IC=7A ; VCE=4V
COB
Output capacitance
IE=0 ; VCB=10V,f=1MHz
105
pF
fT
Transition frequency
IE=-1A ; VCE=12V
10
MHz
400
UNIT
V
10
30
Switching times
ton
Turn-on time
ts
Storage time
tf
Fall time
IC=7A;RL=28.5Ω
IB1=0.7A; IB2=-1.4A
VCC=200V
2
1.0
μs
3.0
μs
0.5
μs
Inchange Semiconductor
Product Specification
2SC5071
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3
Inchange Semiconductor
Product Specification
2SC5071
Silicon NPN Power Transistors
4