Inchange Semiconductor Product Specification 2SD1376 Silicon NPN Power Transistors · DESCRIPTION ·With TO-126 package ·DARLINGTON ·Complement to type 2SB1012 APPLICATIONS ·For low frequency power amplifier applications PINNING(see Fig.2) PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 120 V VCEO Collector-emitter voltage Open base 120 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 1.5 A ICM Collector current-peak 3.0 A PC Collector power dissipation 20 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SD1376 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=10mA; RBE=∞ V(BR)EBO Emitter-base breakdown voltage IE=50mA ;IC=0 VCEsat-1 Collector-emitter saturation voltage IC=1.0A ;IB=1mA 1.5 V VCEsat-2 Collector-emitter saturation voltage IC=1.5A ;IB=1.5mA 2.0 V VBEsat-1 Base-emitter saturation voltage IC=1.0A ;IB=1mA 2.0 V VBEsat-2 Base-emitter saturation voltage IC=1.5A ;IB=1.5mA 2.5 V ICEO Collector cut-off current VCE=100V; RBE=∞ 10 μA ICBO Collector cut-off current VCB=120V; IE=0 100 μA hFE DC current gain IC=1A ; VCE=3V VD Diode forward voltage ID=1.5A ton Turn-on time 120 V 7 V 2000 30000 3.0 V 0.5 μs 2.0 μs IC=1A ;IB1=-IB2=1mA toff Turn-off time 2 Inchange Semiconductor Product Specification 2SD1376 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3