JMnic Product Specification 2SB1103 Silicon PNP Power Transistors DESCRIPTION ・With TO-220C package ・DARLINGTON ・High DC durrent gain ・Low collector saturation voltage ・Complement to type 2SD1603 APPLICATIONS ・Designed for use in low frequency power amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings(Tc=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -60 V VCEO Collector-emitter voltage Open base -60 V VEBO Emitter-base voltage Open collector -7 V IC Collector current-DC -8 A ICM Collector current-peak -12 A PC Collector power dissipation 40 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ JMnic Product Specification 2SB1103 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-25mA, RBE=∞ -60 V V(BR)EBO Emitter-base breakdown voltage IE=-50mA, IC=0 -7 V VCEsat-1 Collector-emitter saturation voltage IC=-4A ,IB=-8mA -1.5 V VCEsat-2 Collector-emitter saturation voltage IC=-8A ,IB=-80mA -3.0 V VBEsat-1 Base-emitter saturation voltage IC=-4A ,IB=-8mA -2.0 V VBEsat-2 Base-emitter saturation voltage IC=-8A ,IB=-80mA -3.5 V ICBO Collector cut-off current VCB=-60V, IE=0 -100 μA ICEO Collector cut-off current VCE=-50V, RBE=∞ -10 μA hFE DC current gain IC=-4A ; VCE=-3V VD Diode forward voltage ID=8A 3.0 V 1000 Switching times ton Turn-on time tstg Storage time tf IC=-4A ,IB1=-IB2=-8mA Fall time 2 0.5 μs 3.0 μs 1.0 μs JMnic Product Specification 2SB1103 Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3