isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1361 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= -150V(Min) ·Wide Area of Safe Operation ·Complement to Type 2SD2052 APPLICATIONS ·Designed for high power amplifications. n c . i m e ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage VALUE UNIT s c s i . w w w -150 V -150 V -5 V IC Collector Current-Continuous -9 A ICP Collector Current-Pulse -15 A Collector Power Dissipation @ TC=25℃ 100 PC W Collector Power Dissipation @ Ta=25℃ TJ Tstg Junction Temperature Storage Temperature Range isc Website：www.iscsemi.cn 3 150 ℃ -55~150 ℃ isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1361 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER VCE(sat) Collector-Emitter Saturation Voltage VBE(on) MAX UNIT IC= -7A; IB= -0.7A -2.0 V Base -Emitter On Voltage IC= -7A; VCE= -5V -1.8 V ICBO Collector Cutoff Current VCB= -150V; IE= 0 -50 μA IEBO Emitter Cutoff Current VEB= -3V; IC= 0 -50 μA hFE-1 DC Current Gain IC= -20mA; VCE= -5V hFE-2 DC Current Gain IC= -1A; VCE= -5V hFE-3 DC Current Gain fT COB w Q S 60-120 80-160 60 200 20 IC= -0.5A; VCE= -5 V; f= 1MHz 15 MHz IE= 0; VCB= -10V; f= 1MHz 270 pF P 100-200 isc Website：www.iscsemi.cn TYP. 20 n c . i m e s c s .i ww Output Capacitance MIN B IC= -7A; VCE= -5V Current-Gain—Bandwidth Product hFE-2Classifications CONDITIONS 2