isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD2140 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 140V(Min) ·Wide Area of Safe Operation ·Complement to Type 2SB1421 APPLICATIONS ·Designed for high power amplifications. ·Optimum for the output stage of a HiFi audio amplifier ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 140 V VCEO Collector-Emitter Voltage 140 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 7 A ICP Collector Current-Pulse 12 A Collector Power Dissipation @ TC=25℃ 80 PC TJ Tstg W Collector Power Dissipation @ Ta=25℃ 2.5 Junction Temperature 150 ℃ -55~150 ℃ Storage Temperature Range isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD2140 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER VCE(sat) Collector-Emitter Saturation Voltage VBE(on) MAX UNIT IC= 5A; IB= 0.5A 2.0 V Base -Emitter On Voltage IC= 5A; VCE= 5V 1.8 V ICBO Collector Cutoff Current VCB= 140V; IE= 0 50 μA IEBO Emitter Cutoff Current VEB= 3V; IC= 0 50 μA hFE-1 DC Current Gain IC= 20mA; VCE= 5V 20 hFE-2 DC Current Gain IC= 1A; VCE= 5V 60 hFE-3 DC Current Gain IC= 5A; VCE= 5V 20 COB Collector Output Capacitance IE= 0; VCB= 10V; f= 1MHz 110 pF Current-Gain—Bandwidth Product IC= 0.5A; VCE= 5 V; f= 1MHz 20 MHz fT CONDITIONS S P 60-120 80-160 100-200 isc Website：www.iscsemi.cn TYP. B hFE-2Classifications Q MIN 2 200