Inchange Semiconductor Product Specification 2SD1680 Silicon NPN Power Transistors DESCRIPTION ·With TO-3PFa package ·High speed switching ·High VCBO ·Large collector power dissipation APPLICATIONS ·For horizontal deflection output applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 330 V VCEO Collector-emitter voltage Open base 200 V VEBO Emitter-base voltage Open collector 6 V IC Collector current (DC) 7 A ICM Collector current (Pulse) 10 A PC Collector power dissipation Ta=25℃ 3 TC=25℃ 70 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Inchange Semiconductor Product Specification 2SD1680 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=30mA ;IB=0 200 V V(BR)CBO Collector-base breakdown voltage IC=1mA; IE=0 330 V VCEsat Collector-emitter saturation voltage IC=5A; IB=0.5A 1.0 V VBEsat Base-emitter saturation voltage IC=5A; IB=0.5A 1.2 V ICES Collector cut-off current VCE=330V; VBE=0 Ta=100℃ 1 15 mA IEBO Emitter cut-off current VEB=6V; IC=0 1 mA hFE DC current gain IC=5A ; VCE=4V Fall time IC=5A IB1=0.8A,VEB=-5V,RB=0.5Ω 0.75 μs tf CONDITIONS 2 MIN TYP. MAX UNIT 15 Inchange Semiconductor Product Specification 2SD1680 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.10 mm) 3