Inchange Semiconductor Product Specification 2SC4928 Silicon NPN Power Transistors DESCRIPTION ·With TO-3PL package ·High speed switching ·High breakdown voltage,high current APPLICATIONS ·Character display horizontal deflection output applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-3PL) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1500 V VCEO Collector-emitter voltage Open base 800 V VEBO Emitter-base voltage Open collector 6 V Collector current 15 A Collector surge current 20 A 150 W IC IC(surge) PC Collector power dissipation TC=25℃ Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Inchange Semiconductor Product Specification 2SC4928 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR )CEO Collector-emitter breakdown voltage IC=10mA; RBE=∞ V(BR )EBO Emitter-base breakdown voltage IE=10mA; IC=0 VCEsat Collector-emitter saturation voltage IC=12A ;IB=3A 5.0 V VBEsat Base-emitter saturation voltage IC=12A ;IB=3A 1.5 V ICES Collector cut-off current VCB=1500V; RBE=0 500 μA IEBO Emitter cut-off current VEB=6V; IC=0 500 μA hFE DC current gain IC=1A ; VCE=5V 38 Fall time IC=8A ;IB1=1.4A;IB2≈-2.5A fH=31.5kHz 0.5 tf CONDITIONS 2 MIN TYP. MAX UNIT 800 V 6 V μs Inchange Semiconductor Product Specification 2SC4928 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.50 mm) 3