ISC 2SD917

Inchange Semiconductor
Product Specification
2SD917
Silicon NPN Power Transistors
DESCRIPTION
·With TO-3PN package
·High speed switching
·High VCBO
·Large collector power dissipation
APPLICATIONS
·For horizontal deflection output
applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Fig.1 simplified outline (TO-3PN) and symbol
Absolute maximum ratings (Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
330
V
VCEO
Collector-emitter voltage
Open base
200
V
VEBO
Emitter-base voltage
Open collector
6
V
IC
Collector current (DC)
7
A
ICM
Collector current (Pulse)
10
A
ICM
Collector current (Nonrepeatitive)
15
A
PC
Collector power dissipation
70
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
TC=25℃
Inchange Semiconductor
Product Specification
2SD917
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdown voltage
IC=30mA ;IB=0
200
V
V(BR)CBO
Collector-base breakdown voltage
IC=1mA; IE=0
330
V
VCEsat
Collector-emitter saturation voltage
IC=5A; IB=0.5A
1.0
V
VBEsat
Base-emitter saturation voltage
IC=5A; IB=0.5A
1.2
V
ICES
Collector cut-off current
VCE=330V; VBE=0
Ta=100℃
1
15
mA
IEBO
Emitter cut-off current
VEB=6V; IC=0
1
mA
hFE-1
DC current gain
IC=0.5A ; VCE=4V
120
hFE -2
DC current gain
IC=5A ; VCE=4V
15
Fall time
IC=5A
IB1=0.8A,VEB=-5V,RB=0.5Ω
tf
CONDITIONS
2
MIN
TYP.
MAX
UNIT
240
0.75
μs
Inchange Semiconductor
Product Specification
2SD917
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.10 mm)
3