Inchange Semiconductor Product Specification 2SD2052 Silicon NPN Power Transistors DESCRIPTION ·With TO-3PFa package ·Wide area of safe operation ·Complement to type 2SB1361 APPLICATIONS ·Optimum for the output stage of a HiFi audio amplifier PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings(Tc=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 150 V VCEO Collector-emitter voltage Open base 150 V VEBO Emitter-base voltage Open collector 5 V IC Collector current (DC) 9 A ICP Collector current (Pulse) 15 A PC Collector power dissipation Ta=25℃ 3 TC=25℃ 100 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Inchange Semiconductor Product Specification 2SD2052 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL CONDITIONS MIN TYP. MAX UNIT Collector-emitter saturation voltage IC=7A; IB=0.7A 2.0 V VBE Base-emitter on voltage IC=7A;VCE=5V 1.8 V ICBO Collector cut-off current VCB=150V; IE=0 50 μA IEBO Emitter cut-off current VEB=3V; IC=0 50 μA hFE-1 DC current gain IC=20mA ; VCE=5V 20 hFE-2 DC current gain IC=1A ; VCE=5V 60 hFE-3 DC current gain IC=7A ; VCE=5V 15 Transition frequency IC=0.5A ; VCE=5V,f=1MHz 20 MHz Collector output capacitance f=1MHz; IE=0;VCB=10V 150 pF VCE(sat) fT COB PARAMETER hFE-2 Classifications Q S P 60-120 80-160 100-200 2 200 Inchange Semiconductor Product Specification 2SD2052 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.30mm) 3