isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB713 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= -140V(Min) ·Good Linearity of hFE ·High Power Dissipation ·Complement to Type 2SD751 APPLICATIONS ·Designed for high power audio frequency amplifier use. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -200 V VCEO Collector-Emitter Voltage -140 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -9 A ICP Collector Current-Pulse -15 A PC Collector Power Dissipation @ TC=25℃ 100 W TJ Junction Temperature 150 ℃ -55~150 ℃ Tstg Storage Temperature Range isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB713 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER VCE(sat) Collector-Emitter Saturation Voltage VBE(on) MAX UNIT IC= -5.0A; IB= -0.7A -2.0 V Base -Emitter On Voltage IC= -7A; VCE= -5V -1.8 V ICBO Collector Cutoff Current VCB= -140V; IE=0 -50 μA IEBO Emitter Cutoff Current VEB= -3V; IC=0 -50 μA hFE-1 DC Current Gain IC= -20mA; VCE= -5V 20 hFE-2 DC Current Gain IC= -1A; VCE= -5V 40 hFE-3 DC Current Gain IC= -5A; VCE= -5V 15 Current-Gain—Bandwidth Product IC= -0.5A; VCE= -5V fT CONDITIONS Q P 40-80 60-120 100-200 isc Website：www.iscsemi.cn TYP. B hFE-2 Classifications R MIN 2 200 20 MHz