Inchange Semiconductor Product Specification 2SD2300 Silicon NPN Power Transistors DESCRIPTION ・With TO-3PML package ・High breakdown voltage ・Built-in damper diode APPLICATIONS ・For color TV horizontal output deflection applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-3PML) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VCBO Collector-base voltage Open emitter VEBO Emitter-base voltage Open collector VALUE UNIT 1500 V 6 V IC Collector current 5 A ICM Collector current-peak 6 A IC(surge) Collector surge current 16 A 50 W PC Collector power dissipation TC=25℃ Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Inchange Semiconductor Product Specification 2SD2300 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX V(BR)EBO Emitter-base breakdown voltage IE=350mA , IC=0 VCE(sat) Collector-emitter saturation voltage IC=4.5A ; IB=1.2A 5.0 V VBE(sat) Base-emitter saturation voltage IC=4.5A ; IB=1.2A 1.5 V ICES Collector cut-off current VCE=1500V; RBE=0 500 μA hFE DC current gain IC=1A ; VCE=5V 20 Fall time IC=4A ; IB1=0.8A; IB2≈-1.5A 1.0 μs Diode forward voltage IF=6A 3.0 V tf VF 2 6 UNIT V Inchange Semiconductor Product Specification 2SD2300 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.10 mm) 3