Inchange Semiconductor Product Specification 2SC4742 Silicon NPN Power Transistors DESCRIPTION ・With TO-3PN package ・Built-in damper diode ・High breakdown voltage APPLICATIONS ・Character display horizontal deflection output applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-3PN) and symbol R O 体 T U 导 D 半 N O C 固电 I EM S E G N A INCH Absolute maximum ratings(Ta=℃) SYMBOL VALUE UNIT 1500 V 6 V Collector current 6 A ICM Collector current-peak 7 A IC(surge) Collector current-surge 16 A Io C to E diode forward current 7 A PC Collector power dissipation 50 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ VCEO VEBO IC PARAMETER CONDITIONS Collector-emitter voltage Open base Emitter-base voltage Open collector TC=25℃ Inchange Semiconductor Product Specification 2SC4742 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)EBO PARAMETER CONDITIONS MIN TYP. MAX Emitter-base breakdown voltage IE=400mA ;IC=0 ICES Collector cut-off current VCE=1500V; RBE=0 0.5 hFE DC current gain IC=1A ; VCE=5V 25 VCE(sat) Collector-emitter saturation voltage IC=5A ; IB=1.25A 2.0 V VBE(sat) Base-emitter saturation voltage IC=5A ; IB=1.25A 1.5 V Diode forward voltage IF=6A 2.0 V Fall time ICP=5A; IB1=1A;IB2=-2A 0.4 μs VECF tf 6 UNIT V R O 体 T U 导 D 半 N O C 固电 I EM S E G N A INCH 2 mA Inchange Semiconductor Product Specification 2SC4742 Silicon NPN Power Transistors PACKAGE OUTLINE R O 体 T U 导 D 半 N O C 固电 I EM S E G N A INCH Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3 Inchange Semiconductor Product Specification 2SC4742 Silicon NPN Power Transistors R O 体 T U 导 D 半 N O C 固电 I EM S E G N A INCH 4