isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector–Emitter Sustaining Voltage— : VCEO(SUS) = 100V(min.) ·DC Current Gain— : hFE = 2000(Min.) @ IC= 1.5 A ·Complement to Type 2SB1149 APPLICATIONS ·Designed for general-purpose amplifier applications. n c . i m e ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL s c s .i PARAMETER ww VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage w VALUE UNIT 150 V 100 V 8 V IC Collector Current-Continuous ±3 A ICM Collector Current-Peak ±5 A Collector Power Dissipation Ta=25℃ 1.3 W PC Ti Tstg Collector Power Dissipation TC=25℃ 15 Junction Temperature 150 ℃ -55~150 ℃ Storage Temperature Range isc Website：www.iscsemi.cn 2SD1692 isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1692 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 3A; IB= 3mA, L= 1.0mH VCE(sat) Collector-Emitter Saturation Voltage IC= 1.5A; IB= 1.5mA 1.2 V VBE(sat) Base-Emitter Saturation Voltage IC= 1.5A; IB= 1.5mA 2.0 V ICBO Collector Cutoff Current VCB= 100V; IE= 0 10 μA ICEO Collector Cutoff Current VCE= 100V; RBE= ∞ 1.0 mA hFE-1 DC Current Gain IC= 1.5 A; VCE= 2V hFE-2 DC Current Gain Switching Times Turn-on Time tstg Storage Time Fall Time B s c s i . w IC= 1.5A, IB1= -IB2= 1.5mA; RL= 27Ω; VCC≈ 40V hFE-1 Classifications M L K 2000-5000 4000-12000 8000-20000 isc Website：www.iscsemi.cn MIN TYP. MAX 100 UNIT V n c . i m e IC= 3 A; VCE= 2V w w ton tf CONDITIONS 2000 20000 1000 0.5 μs 2.0 μs 1.0 μs