Inchange Semiconductor Product Specification 2SB686 Silicon PNP Power Transistors DESCRIPTION ・With TO-3P(I) package ・Complement to type 2SD716 APPLICATIONS ・Power amplifier applications ・Recommend for 30~35W high-fidelity audio frequency amplifier output stage PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base Fig.1 simplified outline (TO-3P(I)) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -100 V VCEO Collector-emitter voltage Open base -100 V VEBO Emitter-base voltage Open collector -5 V IC Collector current -6 A IE Emitter current 6 A PT Total power dissipation 60 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SB686 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=-50mA ,IB=0 -100 V V(BR)EBO Emitter-base breakdown voltage IE=-10mA ,IC=0 -5 V Collector-emitter saturation voltage IC=-4A; IB=-0.4A -2.0 V VBE Base-emitter voltage IC=-4A ; VCE=-5V -1.5 V ICBO Collector cut-off current VCB=-100V; IE=0 -10 μA IEBO Emitter cut-off current VEB=-5V; IC=0 -10 μA hFE DC current gain IC=-1A ; VCE=-5V Transition frequency IC=-1A ; VCE=-5V 10 MHz Collector output capacitance IE=0 ; VCB=-10V ;f=1MHz 270 pF VCEsat fT Cob CONDITIONS hFE Classifications R O 55-110 80-160 2 MIN TYP. 55 MAX UNIT 160 Inchange Semiconductor Product Specification 2SB686 Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm) 3 Inchange Semiconductor Product Specification 2SB686 Silicon PNP Power Transistors 4