Inchange Semiconductor Product Specification 2SD526 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-220C package ・Complement to type 2SB596 ・Good linearity of hFE APPLICATIONS ・Power amplifier applications ・Recommend for 20～25W high fidelity audio frequency amplifier output stage PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 80 V VCEO Collector-emitter voltage Open base 80 V VEBO Emitter-base voltage Open collector 5 V 4 A 0.4 A 30 W IC Collector current IB Base current PC Collector power dissipation Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SD526 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=50mA; IB=0 VCEsat Collector-emitter saturation voltage IC=3 A;IB=0.3 A 1.5 V VBE Base-emitter voltage IC=3A ; VCE=5V 1.5 V ICBO Collector cut-off current VCB=80V ;IE=0 30 μA IEBO Emitter cut-off current VEB=5V; IC=0 100 μA hFE-1 DC current gain IC=0.5A ; VCE=5V 40 hFE-2 DC current gain IC=3A ; VCE=5V 15 fT Transition frequency IC=0.5A ; VCE=5V 8 MHz COB Output capacitance IE=0; VCB=10V;f=1MHz 90 pF CONDITIONS hFE-1 classifications R O Y 40-80 70-140 120-240 2 MIN TYP. MAX 80 UNIT V 240 Inchange Semiconductor Product Specification 2SD526 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm) 3 Inchange Semiconductor Product Specification 2SD526 Silicon NPN Power Transistors 4