isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD855 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 60V(Min) ·Good Linearity of hFE ·Wide Area of Safe Operation ·Complement to Type 2SB760 APPLICATIONS ·Medium power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL n c . i m e s c s i . w PARAMETER VALUE UNIT w w 60 V 60 V VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 1 A ICM Collector Current-Peak 2 A PC Collector Power Dissipation @ TC=25℃ 30 W TJ Junction Temperature 150 ℃ -55~150 ℃ Tstg Storage Temperature Range isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD855 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 1A; IB= 0.125A 1.0 V VBE(on) Base-Emitter On Voltage IC= 1A; VCE= 4V 1.3 V ICEO Collector Cutoff Current VCE= 60V; IB= 0 300 μA ICES Collector Cutoff Current VCE= 80V; IE= 0 200 μA IEBO Emitter Cutoff Current 1 mA hFE-1 DC Current Gain hFE-2 DC Current Gain CONDITIONS B n c . i m e s c s .i VEB= 5V; IC= 0 w w w Q 40-90 70-150 P O 120-250 200-450 isc Website：www.iscsemi.cn IC= 0.2A; VCE= 4V 40 IC= 1A; VCE= 4V 15 2 TYP. MAX 60 B hFE-1 Classifications R MIN UNIT V 450