isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector-Emitter Sustaining Voltage: VCEO(SUS)= 170V(Min) ·High DC Current Gain : hFE= 1500(Min) @IC= 5A ·Low Collector Saturation Voltage APPLICATIONS ·Designed for high voltage high current amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 200 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 10 A ICP Collector Current-Peak 15 A PC Collector Power Dissipation @ TC=25℃ 40 W TJ Junction Temperature 150 ℃ -55~150 ℃ Tstg Storage Temperature Range isc Website：www.iscsemi.cn 2SD1756 isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1756 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 5A; L= 5mH 170 V V(BR)CEO Collector-Emitter Breakdown Voltage IC= 25mA; RBE= ∞ 200 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 50mA; IC= 0 7 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 5A; IB= 10mA 1.5 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 10A; IB= 100mA 3.5 V VBE(sat)-1 Base-Emitter Saturation Voltage IC= 5A; IB= 10mA 2.0 V VBE(sat)-2 Base-Emitter Saturation Voltage IC= 10A; IB= 100mA 4.0 V ICEO Collector Cutoff Current VCE= 180V; RBE= ∞ 500 μA hFE DC Current Gain IC= 5A; VCE= 3V B B 1500 Switching times ton Turn-on Time tstg Storage Time tf IC= 5A, IB1= -IB2= 10mA; VCC= 30V Fall Time isc Website：www.iscsemi.cn 2 0.9 μs 8.0 μs 3.5 μs