isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION ·High DC Current Gain: hFE = 1000(Min)@ IC= -10A ·Collector-Emitter Sustaining Voltage: VCEO(SUS) = -100V(Min) ·Complement to Type 2SD1559 APPLICATIONS ·Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -20 A ICM Collector Current-Peak -30 A IB Base Current- Continuous -3 A PC Collector Power Dissipation @TC=25℃ 100 W Tj Junction Temperature 150 ℃ -55~150 ℃ B Tstg Storage Temperature Range isc Website：www.iscsemi.cn 2SB1079 isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor 2SB1079 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -200mA, RBE= ∞ -100 V V(BR)CEO Collector-Emitter Breakdown Voltage IC= -25mA, RBE= ∞ -100 V V(BR)CBO Collector-Base Breakdown Voltage IC= -0.1mA ,IE= 0 -100 V V(BR)EBO Emitter-Base Breakdown Voltage IE= -50mA ,IC= 0 -7 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -10A ,IB= -20mA -2.0 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -20A ,IB= -200mA -3.0 V VBE(sat)-1 Base-Emitter Saturation Voltage IC= -10A ,IB= -20mA -2.5 V VBE(sat)-2 Base-Emitter Saturation Voltage IC= -20A ,IB= -200mA -3.5 V ICBO Collector Cutoff current VCB= -100V, IE= 0 -0.1 mA ICEO Collector Cutoff current VCE= -80V, RBE= ∞ -1.0 mA hFE DC Current Gain IC= -10A ; VCE= -3V 1000 Switching Times ton Turn-on Time tstg Storage Time 0.6 μs 3.5 μs IC= -10 A, IB1 = -IB2 = -20 mA; isc Website：www.iscsemi.cn