isc Product Specification INCHANGE Semiconductor isc N-Channel MOSFET Transistor STP75NF75 FEATURES ·Drain Current –ID= 80A@ TC=25℃ ·Drain Source Voltage: VDSS= 75V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.011Ω(Max) DESCRIPTION Suitable as primary switch in advanced high-efficiency, highfrequency isolated DC-DC converters for Telecom and Computer applications. It is also intended for any application with low gate drive requirements . APPLICATIONS ·Solenoid and relay drivers ·DC motor control ·DC-DC converters DC ·Automotive environment ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDSS Drain-Source Voltage VGS Gate-Source Voltage-Continuous VALUE UNIT 75 V ±20 V ID Drain Current-Continuous 80 A IDM Drain Current-Single Pluse (tp≤10μs) 320 A PD Total Dissipation @TC=25℃ 300 W TJ Max. Operating Junction Temperature 175 ℃ -55~175 ℃ MAX UNIT Tstg Storage Temperature THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case 0.5 ℃/W Rth j-a Thermal Resistance, Junction to Ambient 62.5 ℃/W isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc N-Channel MOSFET Transistor STP75NF75 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL V(BR)DSS PARAMETER CONDITIONS MIN Drain-Source Breakdown Voltage VGS= 0; ID= 0.25mA 75 VGS(th) Gate Threshold Voltage VDS= VGS; ID= 0.25mA 2 RDS(on) Drain-Source On-Resistance IGSS MAX UNIT V 4 V VGS= 10V; ID= 40A 0.011 Ω Gate-Body Leakage Current VGS= ±20V;VDS= 0 ±100 nA IDSS Zero Gate Voltage Drain Current VDS= 75V; VGS= 0 VDS= 75V; VGS= 0; Tj= 125℃ 1 10 μA VSD Forward On-Voltage IS= 80A; VGS=0 1.5 V · isc Website：www.iscsemi.cn