isc Product Specification INCHANGE Semiconductor isc N-Channel MOSFET Transistor MTP50N06V FEATURES ·Drain Current –ID=42A@ TC=25℃ ·Drain Source Voltage: VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.028Ω(Max) DESCRIPTION ·Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDSS Drain-Source Voltage VGS Gate-Source Voltage-Continuous VALUE UNIT 60 V ±20 V ID Drain Current-Continuous 42 A IDM Drain Current-Single Pluse (tp≤10μs) 147 A PD Total Dissipation @TC=25℃ 125 W TJ Max. Operating Junction Temperature 150 ℃ -55~150 ℃ MAX UNIT Tstg Storage Temperature THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case 1.2 ℃/W Rth j-a Thermal Resistance, Junction to Ambient 62.5 ℃/W isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc N-Channel Mosfet Transistor MTP50N06V ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL V(BR)DSS PARAMETER CONDITIONS MIN Drain-Source Breakdown Voltage VGS= 0; ID= 0.25mA 60 VGS(th) Gate Threshold Voltage VDS= VGS; ID= 0.25mA 2 RDS(on) Drain-Source On-Resistance IGSS MAX UNIT V 4 V VGS= 10V; ID= 21A 0.028 Ω Gate-Body Leakage Current VGS= ±20V;VDS= 0 ±100 nA IDSS Zero Gate Voltage Drain Current VDS= 60V; VGS=0 VDS= 60V; VGS=0; Tj= 150℃ 10 100 μA VSD Forward On-Voltage IS= 42A; VGS=0 2.5 V · isc Website：www.iscsemi.cn