isc Product Specification INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFZ44N FEATURES ·Drain Current –ID=49A@ TC=25℃ ·Drain Source Voltage: VDSS= 55V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.032Ω(Max) ·Fast Switching DESCRIPTION ·Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDSS Drain-Source Voltage VGS Gate-Source Voltage-Continuous VALUE UNIT 55 V ±20 V ID Drain Current-Continuous 49 A IDM Drain Current-Single Pluse (tp≤10μs) 160 A PD Total Dissipation @TC=25℃ 94 W TJ Max. Operating Junction Temperature 175 ℃ -55~175 ℃ MAX UNIT Tstg Storage Temperature THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case 1.5 ℃/W Rth j-a Thermal Resistance, Junction to Ambient 62 ℃/W isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFZ44N ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL V(BR)DSS PARAMETER CONDITIONS MIN Drain-Source Breakdown Voltage VGS= 0; ID= 0.25mA 55 VGS(th) Gate Threshold Voltage VDS= VGS; ID= 0.25mA 2 RDS(on) Drain-Source On-Resistance IGSS MAX UNIT V 4 V VGS= 10V; ID= 25A 0.032 Ω Gate-Body Leakage Current VGS= ±20V;VDS= 0 ±100 nA IDSS Zero Gate Voltage Drain Current VDS= 55V; VGS= 0 VDS= 55V; VGS= 0; Tj= 150℃ 25 250 μA VSD Forward On-Voltage IS= 25A; VGS= 0 1.3 V · isc Website：www.iscsemi.cn