ISC IRFZ44N

isc Product Specification
INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
IRFZ44N
FEATURES
·Drain Current –ID=49A@ TC=25℃
·Drain Source Voltage: VDSS= 55V(Min)
·Static Drain-Source On-Resistance
: RDS(on) = 0.032Ω(Max)
·Fast Switching
DESCRIPTION
·Designed for low voltage, high speed switching applications in
power supplies, converters and power motor controls, these
devices are particularly well suited for bridge circuits where
diode speed and commutating safe operating areas are critical
and offer additional safety margin against unexpected voltage
transients.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VDSS
Drain-Source Voltage
VGS
Gate-Source Voltage-Continuous
VALUE
UNIT
55
V
±20
V
ID
Drain Current-Continuous
49
A
IDM
Drain Current-Single Pluse (tp≤10μs)
160
A
PD
Total Dissipation @TC=25℃
94
W
TJ
Max. Operating Junction Temperature
175
℃
-55~175
℃
MAX
UNIT
Tstg
Storage Temperature
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal Resistance, Junction to Case
1.5
℃/W
Rth j-a
Thermal Resistance, Junction to Ambient
62
℃/W
isc Website:www.iscsemi.cn
isc Product Specification
INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
IRFZ44N
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
V(BR)DSS
PARAMETER
CONDITIONS
MIN
Drain-Source Breakdown Voltage
VGS= 0; ID= 0.25mA
55
VGS(th)
Gate Threshold Voltage
VDS= VGS; ID= 0.25mA
2
RDS(on)
Drain-Source On-Resistance
IGSS
MAX
UNIT
V
4
V
VGS= 10V; ID= 25A
0.032
Ω
Gate-Body Leakage Current
VGS= ±20V;VDS= 0
±100
nA
IDSS
Zero Gate Voltage Drain Current
VDS= 55V; VGS= 0
VDS= 55V; VGS= 0; Tj= 150℃
25
250
μA
VSD
Forward On-Voltage
IS= 25A; VGS= 0
1.3
V
·
isc Website:www.iscsemi.cn