ISC BD201

isc Product Specification
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
BD201/203
DESCRIPTION
·Collector-Emitter Breakdown Voltage: V(BR)CEO = 45V(Min)- BD201
60V(Min)- BD203
·Complement to Type BD202/204
APPLICATIONS
·Designed for use in hi-fi equipment delivering an output
of 15 to 15 W into a 4Ωor 8Ωload.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
BD201
VCBO
VCEO
VEBO
UNIT
60
Collector-Base Voltage
V
BD203
60
BD201
45
BD203
60
Collector-Emitter Voltage
V
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
8
A
ICM
Collector Current-Peak tp≤10ms
12
A
ICSM
Collector Current-Peak tp≤2ms
25
A
IB
Base Current
3
A
PC
Collector Power Dissipation
@ TC=25℃
60
W
TJ
Junction Temperature
150
℃
-65~150
℃
B
Tstg
Storage Temperature Range
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal Resistance, Junction to Case
Rth j-a
Thermal Resistance, Junction to Ambient
isc Website:www.iscsemi.cn
MAX
UNIT
2.08
℃/W
70
℃/W
isc Product Specification
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
BD201/203
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
V(BR)CEO
PARAMETER
Collector-Emitter
Breakdown Voltage
CONDITIONS
BD201
MIN
MAX
UNIT
45
IC= 0.2A ;IB= 0
V
B
BD203
60
V(BR)CBO
Collector-Base Breakdown Voltage
IC= 1mA ;IE= 0
60
V
V(BR)EBO
Emitter-Base Breakdown Voltage
IE= 1mA ;IC= 0
5
V
VCE(sat)-1
Collector-Emitter Saturation Voltage
IC= 3A; IB= 0.3A
1.0
V
VCE(sat)-2
Collector-Emitter Saturation Voltage
IC= 6A; IB= 0.6A
1.5
V
VBE(sat)
Base-Emitter Saturation Voltage
IC= 6A; IB= 0.6A
2.0
V
VBE(on)
Base-Emitter On Voltage
IC= 3A ; VCE= 2V
1.5
V
ICEO
Collector Cutoff Current
VCE= 30V; IB= 0
0.2
mA
ICBO
Collector Cutoff Current
VCB= 40V;IE= 0; TJ= 150℃
1.0
mA
IEBO
Emitter Cutoff Current
VEB= 5V; IC=0
0.5
mA
hFE
fT
B
B
B
B
BD201
IC= 3A ; VCE= 2V
BD203
IC= 2A ; VCE= 2V
DC Current Gain
30
Current-Gain—Bandwidth Product
IC= 0.3A ; VCE= 3V, ftest= 1.0MHz
7.0
MHz
Switching Times
ton
Turn-On Time
1
μs
4
μs
IC= 2A; IB1= -IB2= 0.2A
toff
Turn-Off Time
isc Website:www.iscsemi.cn
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