ISC BD376

isc Product Specification
INCHANGE Semiconductor
isc Silicon PNP Power Transistors
BD376/378/380
DESCRIPTION
·DC Current Gain: hFE= 20(Min)@ IC= -1A
·Complement to Type BD375/377/379
APPLICATIONS
·Designed for medium power linear and switching
applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
VCBO
VCEO
VEBO
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
VALUE
BD376
-50
BD378
-75
BD380
-100
BD376
-45
BD378
-60
BD380
-80
UNIT
V
V
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-2
A
ICM
Collector Current-Peak
-3
A
IB
Base Current-Continuous
-1
A
PC
Collector Power Dissipation
@ TC=25℃
25
W
TJ
Junction Temperature
150
℃
-55~150
℃
B
Tstg
Storage Temperature Range
isc Website:www.iscsemi.cn
isc Product Specification
INCHANGE Semiconductor
isc Silicon PNP Power Transistors
BD376/378/380
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BD376
VCEO(SUS)
VCBO
Collector-Emitter
Sustaining Voltage
Collector-Base Voltage
BD378
MIN
MAX
UNIT
-45
IC= -100mA ; IB= 0
-80
BD376
-50
IC= -0.1mA ; IE= 0
BD380
V
-60
BD380
BD378
TYP.
V
-75
-100
VCE(sat)
Collector-Emitter Saturation Voltage
IC= -1A; IB= -0.1A
-1.0
V
VBE(on)
Base-Emitter On Voltage
IC= -1A; VCE= -2V
-1.5
V
BD376
VCB= -45V; IE= 0
-2
BD378
VCB= -60V; IE= 0
-2
BD380
VCB= -80V; IE= 0
-2
-0.1
ICBO
Collector Cutoff Current
B
IEBO
Emitter Cutoff Current
VEB= -5V; IC= 0
hFE-1
DC Current Gain
IC= -0.15A ; VCE= -2V
40
hFE-2
DC Current Gain
IC= -1A; VCE= -2V
20
μA
mA
375
Switching Times
‹
ton
Turn-On Time
toff
Turn-Off Time
IC= -0.5A; IB1= -IB2= -50mA;
VCC= -30V
hFE-1 Classifications
6
10
16
25
40-100
63-160
100-250
150-375
isc Website:www.iscsemi.cn
2
0.05
μs
0.5
μs