isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB812 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= -60V(Min) ·High Power Dissipation ·Complement to Type 2SD1032 APPLICATIONS ·Designed for AF power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -4 A ICM Collector Current-Peak -8 A PC Collector Power Dissipation @ TC=25℃ 60 W TJ Junction Temperature 150 ℃ -55~150 ℃ Tstg Storage Temperature Range isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB812 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX V(BR)CEO Collector-Emitter Breakdown Voltage IC= -30mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -4A; IB= -0.4A -1.5 V VBE(on) Base -Emitter On Voltage IC= -3A; VCE= -4V -2.0 V ICEO Collector Cutoff Current VCE= -30V; IB= 0 -700 μA ICES Collector Cutoff Current VCE= -60V; VBE= 0 -400 μA hFE-1 DC Current Gain IC= -1A; VCE= -4V 40 hFE-2 DC Current Gain IC= -3A; VCE= -4V 15 -60 UNIT V B B 250 Switching times ton Turn-on Time 0.2 μs 1.4 μs IC= -4A, IB1= -IB2= -0.4A toff Turn-Off Time hFE-1 Classifications R Q P 40-90 70-150 120-250 isc Website：www.iscsemi.cn 2