ISC BD898

Inchange Semiconductor
Product Specification
BD896/898/900/902
Silicon PNP Power Transistors
DESCRIPTION
・With TO-220C package
・Complement to type BD895/897/899/901
・DARLINGTON
APPLICATIONS
・For use in output stages in audio equipment,
general amplifier,and analogue switching
applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
导体
半
电
R
O
T
UC
Absolute maximum ratings(Ta=25℃)
固
SYMBOL
PARAMETER
BD896
BD898
VCBO
INCH
Open emitter
Emitter-base voltage
IC
Collector current-DC
IB
Base current
PT
Total power dissipation
VALUE
-60
V
-80
-100
BD896
-45
BD898
UNIT
-45
BD902
Collector-emitter voltage
VEBO
OND
EMIC
S
E
G
AN
Collector-base voltage
BD900
VCEO
CONDITIONS
-60
Open base
V
BD900
-80
BD902
-100
Open collector
-5
V
-8
A
-300
mA
TC=25℃
70
Ta=25℃
2
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-65~150
℃
Inchange Semiconductor
Product Specification
BD896/898/900/902
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BD896
V(BR)CEO
VCEsat
VBE
Collector-emitter
breakdown voltage
MAX
UNIT
-60
IC=-100mA, IB=0
V
BD900
-80
BD902
-100
Collector-emitter saturation voltage
IC=-3A ,IB=-12mA
-2.5
V
Base-emitter on voltage
IC=-3A ; VCE=-3V
-2.5
V
VCB=-45V, IE=0
TC=100℃
VCB=-60V, IE=0
TC=100℃
VCB=-80V, IE=0
TC=100℃
VCB=-100V, IE=0
TC=100℃
-0.2
-2.0
BD898
Collector cut-off current
BD900
导体
半
电
BD902
固
ICEO
TYP.
-45
BD898
BD896
ICBO
MIN
VCE=-30V, IB=0
BD898
VCE=-30V, IB=0
BD900
G
N
A
CH
VCE=-40V, IB=0
BD902
VCE=-50V, IB=0
M
E
S
E
IN
IEBO
Emitter cut-off current
VEB=-5V; IC=0
hFE
DC current gain
IC=-3A ; VCE=-3V
VEC
Diode forward voltage
IE=-8A
ton
Turn-on time
toff
Turn-off time
IC=-3A ; IB1=-IB2=-12mA
VBE=3.5V;RL=10Ω;tp=20μs
mA
-0.2
-2.0
-0.2
-2.0
R
O
T
UC
D
N
O
IC
BD896
Collector cut-off current
-0.2
-2.0
-0.5
mA
-2
mA
-3.5
V
750
1
μs
5
μs
THERMAL CHARACTERISTICS
SYMBOL
Rth j-c
PARAMETER
Thermal resistance junction to case
2
MAX
UNIT
1.79
℃/W
Inchange Semiconductor
Product Specification
BD896/898/900/902
Silicon PNP Power Transistors
PACKAGE OUTLINE
导体
半
电
固
D
N
O
IC
R
O
T
UC
M
E
S
GE
N
A
H
INC
Fig.2 Outline dimensions
3