ISC BDV67A

Inchange Semiconductor
Product Specification
BDV67/67A/67B/67C/67D
Silicon NPN Power Transistors
DESCRIPTION
・With TO-3PN package
・Complement to type BDV66/66A/66B/66C/66D
・DARLINGTON
・High DC current gain
APPLICATIONS
・For use in audio output stages and general
amplifier and switching applications.
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Fig.1 simplified outline (TO-3PN) and symbol
导体
半
电
Absolute maximum ratings(Tc=25℃)
SYMBOL
固
VCBO
PARAMETER
BDV67A
Collector-base voltage
VEBO
M
E
S
E
BDV67B
ANG
Collector-emitter voltage
Emitter-base voltage
TOR
VALUE
C
U
D
ICON
BDV67
INCH
VCEO
CONDITIONS
Open emitter
80
100
120
BDV67C
140
BDV67D
160
BDV67
60
BDV67A
80
BDV67B
Open base
100
BDV67C
120
BDV67D
150
Open collector
UNIT
V
V
5
V
IC
Collector current
16
A
ICM
Collector current-peak
20
A
IB
Base current
0.5
A
PC
Collector power dissipation
200
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-65~150
℃
TC=25℃
Inchange Semiconductor
Product Specification
BDV67/67A/67B/67C/67D
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V(BR)CEO
VCEsat
PARAMETER
Collector-emitter
breakdown voltage
CONDITIONS
MIN
BDV67
60
BDV67A
80
BDV67B
IC=30mA, IB=0
TYP.
MAX
UNIT
V
100
BDV67C
120
BDV67D
150
Collector-emitter saturation voltage
IC=10A ,IB=40mA
2.0
V
VBE
Base-emitter on voltage
IC=10A ; VCE=3V
2.5
V
ICBO
Collector cut-off current
VCB=VCBOmax, IE=0
VCB=1/2VCBOmax; Tj=150℃
1.0
4.0
mA
ICEO
Collector cut-off current
VCE=1/2VCEOmax, IB=0
1
mA
IEBO
Emitter cut-off current
VEB=5V; IC=0
DC current gain
IC=1A ; VCE=3V
DC current gain
IC=10A ; VCE=3V
hFE-1
hFE-2
体
半导
固电
hFE-3
DC current gain
Collector capacitance
VF
Diode forward voltage
ton
Turn-on time
toff
Turn-off time
D
N
O
IC
M
E
S
GE
N
A
H
INC
CC
R
O
T
UC
5
3000
1000
IC=16A ; VCE=3V
1000
IE=0 ; VCB=10V;f=1MHz
300
IE=10A
pF
3.0
IC = 10 A, IB1 =-IB2=40 mA
VCC = 12V
mA
V
1.0
μs
3.5
μs
THERMAL CHARACTERISTICS
SYMBOL
Rth j-mb
PARAMETER
Thermal resistance junction to mounting base
2
MAX
UNIT
0.625
K/W
Inchange Semiconductor
Product Specification
BDV67/67A/67B/67C/67D
Silicon NPN Power Transistors
PACKAGE OUTLINE
导体
半
电
固
R
O
T
UC
D
N
O
IC
M
E
S
GE
N
A
H
INC
Fig.2 Outline dimensions(unindicated tolerance:±0.1mm)
3