Inchange Semiconductor Product Specification BDV67/67A/67B/67C/67D Silicon NPN Power Transistors DESCRIPTION ・With TO-3PN package ・Complement to type BDV66/66A/66B/66C/66D ・DARLINGTON ・High DC current gain APPLICATIONS ・For use in audio output stages and general amplifier and switching applications. PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-3PN) and symbol 导体 半 电 Absolute maximum ratings(Tc=25℃) SYMBOL 固 VCBO PARAMETER BDV67A Collector-base voltage VEBO M E S E BDV67B ANG Collector-emitter voltage Emitter-base voltage TOR VALUE C U D ICON BDV67 INCH VCEO CONDITIONS Open emitter 80 100 120 BDV67C 140 BDV67D 160 BDV67 60 BDV67A 80 BDV67B Open base 100 BDV67C 120 BDV67D 150 Open collector UNIT V V 5 V IC Collector current 16 A ICM Collector current-peak 20 A IB Base current 0.5 A PC Collector power dissipation 200 W Tj Junction temperature 150 ℃ Tstg Storage temperature -65~150 ℃ TC=25℃ Inchange Semiconductor Product Specification BDV67/67A/67B/67C/67D Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO VCEsat PARAMETER Collector-emitter breakdown voltage CONDITIONS MIN BDV67 60 BDV67A 80 BDV67B IC=30mA, IB=0 TYP. MAX UNIT V 100 BDV67C 120 BDV67D 150 Collector-emitter saturation voltage IC=10A ,IB=40mA 2.0 V VBE Base-emitter on voltage IC=10A ; VCE=3V 2.5 V ICBO Collector cut-off current VCB=VCBOmax, IE=0 VCB=1/2VCBOmax; Tj=150℃ 1.0 4.0 mA ICEO Collector cut-off current VCE=1/2VCEOmax, IB=0 1 mA IEBO Emitter cut-off current VEB=5V; IC=0 DC current gain IC=1A ; VCE=3V DC current gain IC=10A ; VCE=3V hFE-1 hFE-2 体 半导 固电 hFE-3 DC current gain Collector capacitance VF Diode forward voltage ton Turn-on time toff Turn-off time D N O IC M E S GE N A H INC CC R O T UC 5 3000 1000 IC=16A ; VCE=3V 1000 IE=0 ; VCB=10V;f=1MHz 300 IE=10A pF 3.0 IC = 10 A, IB1 =-IB2=40 mA VCC = 12V mA V 1.0 μs 3.5 μs THERMAL CHARACTERISTICS SYMBOL Rth j-mb PARAMETER Thermal resistance junction to mounting base 2 MAX UNIT 0.625 K/W Inchange Semiconductor Product Specification BDV67/67A/67B/67C/67D Silicon NPN Power Transistors PACKAGE OUTLINE 导体 半 电 固 R O T UC D N O IC M E S GE N A H INC Fig.2 Outline dimensions(unindicated tolerance:±0.1mm) 3