ISC BD643

Inchange Semiconductor
Product Specification
BD643
Silicon NPN Dalington Power Transistors
DESCRIPTION
・With TO-220C package
・Complement to type BD644
・DARLINGTON
APPLICATIONS
・For use in output stages in audio
equipment ,general amplifier,and
analogue switching applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
45
V
VCEO
Collector-emitter voltage
Open base
45
V
VEBO
Emitter-base voltage
Open collector
5
V
IC
Collector current-DC
8
A
ICM
Collector current-Pulse
12
A
IB
Base current
150
A
PC
Collector power dissipation
62.5
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
MAX
UNIT
1.5
℃/W
TC=25℃
THERMAL CHARACTERISTICS
SYMBOL
Rth j-c
PARAMETER
Thermal resistance junction to case
Inchange Semiconductor
Product Specification
BD643
Silicon NPN Dalington Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdown voltage
IC=0.1A, IB=0
45
V
V(BR)CBO
Collector-base breakdown voltage
IC=5mA, IE=0
45
V
V(BR)EBO
Emitter-base breakdown voltage
IE=2mA, IC=0
5
V
Collector-emitter saturation voltage
IC=3A ,IB=12mA
2.0
V
VBE
Base-emitter voltage
IC=3A , VCE=3V
2.5
V
ICBO
Collector cut-off current
VCB=VCBMax; IE=02
0.2
mA
ICEO
Collector cut-off current
VCE=1/2 VCEMax; IB=0
0.5
mA
IEBO
Emitter cut-off current
VEB=5V; IC=0
5
mA
hFE-1
DC current gain
IC=0.5A ; VCE=3V
hFE-2
DC current gain
IC=3A ; VCE=3V
hFE-3
DC current gain
IC=6A ; VCE=3V
750
VF
Diode forward voltage
IF=3A
1.8
V
fT
Transition frequency
IC=3A;VCE=3V;f=1MHz
7
MHz
VCEsat
CONDITIONS
2
MIN
TYP.
MAX
UNIT
1500
750
Inchange Semiconductor
Product Specification
Silicon NPN Dalington Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
BD643