Inchange Semiconductor Product Specification BD896A/898A/900A Silicon PNP Power Transistors DESCRIPTION ・With TO-220C package ・Complement to type BD895A/897A/901A ・DARLINGTON APPLICATIONS ・For use in output stages in audio equipment, general amplifier,and analogue switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter 导体 半 电 R O T UC Absolute maximum ratings(Ta=25℃) 固 SYMBOL VCBO VCEO PARAMETER CONDITIONS D N O IC BD896A Collector-base voltage M E S E BD898A ANG INCH Collector-emitter voltage Open emitter Emitter-base voltage IC Collector current-DC IB Base current PT Total power dissipation -60 -80 BD896A -45 BD898A Open base UNIT -45 BD900A BD900A VEBO VALUE -60 V V -80 Open collector -5 V -8 A -300 mA TC=25℃ 70 Ta=25℃ 2 W Tj Junction temperature 150 ℃ Tstg Storage temperature -65~150 ℃ Inchange Semiconductor Product Specification BD896A/898A/900A Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BD896A V(BR)CEO Collector-emitter breakdown voltage BD898A VBE ICEO MAX UNIT IC=-100mA, IB=0 V -60 -80 Collector-emitter saturation voltage IC=-4A ,IB=-16mA -2.8 V Base-emitter on voltage IC=-4A ; VCE=-3V -2.5 V BD896A VCB=-45V, IE=0 TC=100℃ -0.2 -2.0 BD898A VCB=-60V, IE=0 TC=100℃ -0.2 -2.0 BD900A VCB=-80V, IE=0 TC=100℃ -0.2 -2.0 BD896A VCE=-30V, IB=0 BD898A VCE=-30V, IB=0 BD900A VCE=-40V, IB=0 Collector cut-off current ICBO TYP. -45 BD900A VCEsat MIN 体 半导 Collector cut-off current 固电 IEBO Emitter cut-off current hFE DC current gain VEC Diode forward voltage ton Turn-on time toff Turn-off time N A H INC R O T UC D N O IC M E S GE VEB=-5V; IC=0 IC=-4A ; VCE=-3V -0.5 mA -2 mA -3.5 V 750 IE=-8A IC=3A ; IB1=-IB2=12mA VBE=-3.5V;RL=10Ω;tp=20μs mA 1 μs 5 μs THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case 2 MAX UNIT 1.79 ℃/W Inchange Semiconductor Product Specification BD896A/898A/900A Silicon PNP Power Transistors PACKAGE OUTLINE 导体 半 电 固 D N O IC R O T UC M E S GE N A H INC Fig.2 Outline dimensions 3