Inchange Semiconductor Product Specification BD683 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-126 package ・Complement to type BD684 ・DARLINGTON APPLICATIONS ・For audio and video applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 140 V VCEO Collector-emitter voltage Open base 120 V VEBO Emitter -base voltage Open collector 5 V IC Collector current (DC) 4 A ICM Collector current-Peak 6 A IBM Base current-Peak 0.1 A PT Total power dissipation 40 W Tj Junction temperature 150 ℃ Tstg Storage temperature -65~150 ℃ MAX UNIT 3.12 K/W TC=25℃ THERMAL CHARACTERISTICS SYMBOL Rth j-mb PARAMETER Thermal resistance, junction to mouting base Inchange Semiconductor Product Specification BD683 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER VCEsat Collector-emitter saturation voltage VBE MAX UNIT IC=1.5A; IB=6mA 2.5 V Base-emitter on voltage IC=1.5A ; VCE=3V 2.5 V ICBO Collector cut-off current VCB=120V; IE=0 0.2 mA ICEO Collector cut-off current VCE=60V; IB=0 0.2 mA IEBO Emitter cut-off current VEB=5V; IC=0 5 mA hFE-1 DC current gain IC=500mA ; VCE=3V hFE-2 DC current gain IC=1.5A ; VCE=3V hFE-3 DC current gain IC=4A ; VCE=3V 0.8 2 μs 4.5 8 μs ton Turn-on time toff Turn-off time CONDITIONS IC=1.5A;IB1=-IB2=6mA VCC=30V 2 MIN TYP. 2200 750 1500 Inchange Semiconductor Product Specification BD683 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3