Inchange Semiconductor Product Specification 2SC1516 Silicon NPN Power Transistors DESCRIPTION ·With TO-220 package ·Low collector saturation voltage APPLICATIONS ·For medium power amplifer applicatons PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 35 V VCEO Collector-emitter voltage Open base 35 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 1.5 A ICM Collector current-peak 3.0 A PC Collector power dissipation 10 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SC1516 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=25mA ,IB=0 35 V V(BR)EBO Emitter-base breakdown voltage IE=1mA ,IC=0 5 V VCEsat Collector-emitter saturation voltage IC=1A; IB=0.1A 2.0 V VBEsat Base-emitter saturation voltage IC=1A; IB=0.1A 1.5 V ICBO Collector cut-off current VCB=35V; IE=0 20 μA IEBO Emitter cut-off current VEB=5V; IC=0 20 μA hFE DC current gain IC=0.5A ; VCE=2V Transition frequency IC=0.2A ; VCE=10V fT CONDITIONS hFE Classifications B C 60-120 100-200 2 MIN TYP. 60 MAX UNIT 200 110 MHz Inchange Semiconductor Product Specification 2SC1516 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm) 3