Inchange Semiconductor Product Specification 2SB1369 Silicon PNP Power Transistors DESCRIPTION ・With TO-220 package ・High collector power dissipation ・High current capability APPLICATIONS ・For general purpose applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base Fig.1 simplified outline (TO-220) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -60 V VCEO Collector -emitter voltage Open base -60 V VEBO Emitter-base voltage Open collector -5 V IC Collector current -3 A ICM Collector current-peak -6 A PC Collector power dissipation Ta=25℃ 2.0 W TC=25℃ 40 Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Inchange Semiconductor Product Specification 2SB1369 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=-1mA; IB=0 -60 V V(BR)CBO Collector-base breakdown voltage IC=-50μA; IE=0 -60 V V(BR)EBO Emitter-base breakdown voltage IE=-50μA; IC=0 -5 V VCEsat Collector-emitter saturation voltage IC=-2A ;IB=-0.2A -1.5 V VBEsat Base-emitter saturation voltage IC=-2A; IB=-0.2A -1.5 V ICBO Collector cut-off current VCB=-60V; IE=0 -10 μA IEBO Emitter cut-off current VEB=-4V; IC=0 -10 μA hFE DC current gain IC=-0.5A ; VCE=-5V Transition frequency IC=-0.5A; VCE=-5V 15 MHz Collector output capacitance f=1MHz ; VCB=10V 80 pF fT COB CONDITIONS 2 MIN TYP. 100 MAX UNIT 320 Inchange Semiconductor Product Specification 2SB1369 Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm) 3