isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BU1706A DESCRIPTION ·High Voltage ·High Speed Switching APPLICATIONS ·Designed for use in high frequency electronic lighting ballast applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VCESM Collector-Emitter Voltage VBE= 0 VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage VALUE UNIT 1750 V 750 V 12 V s c s i . w w w IC Collector Current-Continuous 5 A ICM Collector Current-Peak 8 A IB Base Current-Continuous 3 A IBM Base Current-peak 5 A PC Collector Power Dissipation @TC=25℃ 100 W Tj Junction Temperature 150 ℃ -65~150 ℃ B Tstg n c . i m e Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.25 ℃/W isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BU1706A ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.1A; IB= 0; L= 25mH VCE(sat) Collector-Emitter Saturation Voltage IC= 1.5A; IB= 0.3A 1.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 1.5A; IB= 0.3A 1.3 V ICES Collector Cutoff Current VCE= VCESM; VBE= 0 VCE= VCESM; VBE= 0; TC=125℃ 1.0 2.0 mA IEBO Emitter Cutoff Current VEB= 12V; IC= 0 1.0 mA hFE-1 DC Current Gain IC= 5mA; VCE= 10V hFE-2 DC Current Gain hFE-3 DC Current Gain m e s isc Switching Times Resistive Load IC= 400mA; VCE= 3V . w w w ton Turn-On Time ts Storage Time tf Fall Time CONDITIONS isc Website：www.iscsemi.cn IC= 1.5A; VCE= 1V IC= 1.5A; IB1= -IB2= 0.3A MIN TYP. MAX 750 UNIT V 8 n c . i 12 35 5 1.5 μs 6.5 μs 1.0 μs