isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BUT211X DESCRIPTION ·Collector-Emitter Sustaining Voltage: VCEO(SUS)= 400V(Min.) ·High Speed Switching APPLICATIONS ·Designed for high frequency electronic lighting ballast applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage n c . i m e VALUE UNIT 850 V 400 V 9 V s c s i . w w w IC Collector Current-Continuous 5 A ICM Collector Current-Peak 10 A IB Base Current-Continuous 2 A IBM Base Current-peak 4 A PC Collector Power Dissipation @TC=25℃ 32 W Tj Junction Temperature 150 ℃ -65~150 ℃ B Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 3.95 ℃/W isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BUT211X ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.1A; IB= 0; L= 25mH VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.4A 2.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 3A; IB= 0.4A 1.3 V ICES Collector Cutoff Current VCE= 850V; VBE= 0 VCE= 850V; VBE= 0; Tj= 125℃ 1.0 2.0 mA IEBO Emitter Cutoff Current VEB= 9V; IC= 0 10 mA hFE-1 DC Current Gain IC= 1A; VCE= 2V hFE-2 DC Current Gain ts tf w w Storage Time Fall Time B n c . i m e s c s i . w hFE-1 Classifications 1 2 3 13-20 18-25 23-30 isc Website：www.iscsemi.cn TYP. MAX 400 B IC= 3A; VCE= 2V Switching Times; Resistive Load MIN 13 UNIT V 30 7.5 2.0 μs 0.8 μs IC= 3A; IB1= 0.3A; IB2= -0.6A