isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BUT93 DESCRIPTION ·High Voltage ·High Speed Switching ·High Power Dissipation APPLICATIONS ·Designed for switching mode power supply and electronic ballast applications. n c . i m e ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VCES Collector-Emitter Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage VALUE UNIT s c s i . w w w 600 V 350 V 5 V IC Collector Current-Continuous 4 A ICM Collector Current-Peak 6 A IB Base Current- Continuous 2 A PC Collector Power Dissipation @TC=25℃ 50 W Tj Junction Temperature 150 ℃ -65~150 ℃ B Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 2.5 ℃/W isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BUT93 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage IC= 0.1A; IB= 0, L= 125mH V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 0.3A; IB= 30mA 0.5 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 3A; IB= 750mA 1.0 V Base-Emitter Saturation Voltage IC= 1A; IB= 0.2A 1.1 V ICES Collector Cutoff Current VCE= 600V; VBE= 0 VCE= 600V; VBE= 0; TC=125℃ 0.2 1.5 mA hFE DC Current Gain VBE(sat) fT w w tf Storage Time Fall Time isc Website：www.iscsemi.cn MIN TYP. 5 V n c . i m e IC= 0.5A; VCE= 10V UNIT V B IC= 1A; VCE= 2V MAX 350 B s c s i . w Current-Gain—Bandwidth Product Switching Times ;Resistive Load ts CONDITIONS 10 9 MHz 2.0 μs 0.25 μs IC= 1A; IB1= 0.2A; IB2= -0.4A