isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BUT54 DESCRIPTION ·High Voltage ·High Speed Switching ·High Power Dissipation APPLICATIONS ·Designed for switching mode power supply and electronic ballast applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector-Emitter Voltage 800 V VCER Collector-Emitter Voltage RBE≤100Ω 800 V VCEO Collector-Emitter Voltage 430 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 8 A ICM Collector Current-Peak 10 A IBM Base Current-Peak 4 A PC Collector Power Dissipation @TC=25℃ 100 W Tj Junction Temperature 150 ℃ -55~150 ℃ Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case isc Website：www.iscsemi.cn MAX UNIT 1.25 ℃/W isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BUT54 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage IC= 0.1A; IB= 0, L= 125mH 430 V V(BR)CER Collector-Emitter Breakdown Voltage IC= 0.5mA; IB= 0, RBE≤100Ω 800 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 6 V VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 0.8A 5.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 4A; IB= 0.8A 2.0 V ICES Collector Cutoff Current VCE= 800V; VBE= 0 VCE= 800V; VBE= 0; TC=150℃ 1.0 2.0 mA hFE-1 DC Current Gain IC= 1A; VCE= 5V 20 hFE-2 DC Current Gain IC= 4A; VCE= 5V 5.5 Current-Gain—Bandwidth Product IC= 0.5A; VCE= 10V fT CONDITIONS B MIN TYP. B B MAX UNIT 45 10 MHz Switching Times ;Resistive Load toff Turn-off Time 4.0 μs 1.0 μs IC=4A; IB1=-IB2=1.25A; tp=20μs tf Fall Time isc Website：www.iscsemi.cn