isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector Current -IC= 10A ·DC Current Gain: hFE= 200(Min)@ IC= 5A ·Low Collector Saturation Voltage APPLICATIONS ·Designed for line operated switchmode applications such as: ·Switching regulators ·Inverters ·Solenoid and relay drivers ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 400 V VCEO Collector-Emitter Voltage 200 V VEBO Emitter-Base Voltage 8 V IC Collector Current-Continuous 10 A PC Collector Power Dissipation @ TC=25℃ 50 W TJ Junction Temperature 150 ℃ -55~150 ℃ Tstg Storage Temperature Range isc Website：www.iscsemi.cn BU180A isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor BU180A ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA ;IB=0 VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 20mA 1.5 V VBE(sat) Base-Emitter Saturation Voltage IC= 4A; IB= 20mA 2.0 V ICEO Collector Cutoff Current VCE= 200V; IB= 0 1.0 mA ICBO Collector Cutoff Current VCB= 400V;IE= 0 1.0 mA IEBO Emitter Cutoff Current VEB= 8V; IC=0 10 mA hFE DC Current Gain IC= 5A ; VCE= 5V isc Website：www.iscsemi.cn CONDITIONS MIN MAX 200 B B 2 TYP. 200 UNIT V