isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector Current -IC= 30A ·High DC Current Gain: hFE= 1000(Min)@ IC= 15A ·Low Collector Saturation Voltage APPLICATIONS ·Designed for audio frequency power amplifier and low speed high current switching industrial use. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 30 A IB Base Current-Continuous 1.5 A PC Collector Power Dissipation @ TC=25℃ 80 W TJ Junction Temperature 150 ℃ -55~150 ℃ B Tstg Storage Temperature Range isc Website：www.iscsemi.cn 2SD1597 isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1597 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage IC= 25mA ;IB=0 120 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 5mA ;IC=0 7 V VCE(sat) Collector-Emitter Saturation Voltage IC= 30A; IB= 0.1A 2.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 30A; IB= 0.1A 2.5 V ICEO Collector Cutoff Current VCE= 60V; IB= 0 1.0 mA ICBO Collector Cutoff Current VCB= 120V;IE= 0 10 μA IEBO Emitter Cutoff Current VEB= 7V; IC=0 5 mA hFE DC Current Gain IC= 15A ; VCE= 2V isc Website：www.iscsemi.cn CONDITIONS B MIN B 2 1000 TYP. MAX UNIT