isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor DESCRIPTION ·High DC Current Gain: hFE = 2000(Min)@ IC= 2A ·Low Collector Saturation Voltage: VCE(sat) = 2.0V(Max.) @IC= 5A ·Complement to Type 2SB1478 APPLICATIONS ·Designed for power linear and switching applications. SYMBOL ww PARAMETER w VALUE UNIT 100 V 100 V VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 8 A PC Collector Power Dissipation @TC=25℃ 60 W Tj Junction Temperature 150 ℃ -55~150 ℃ Tstg Storage Temperature Range isc Website：www.iscsemi.cn n c . i m e s c s .i ABSOLUTE MAXIMUM RATINGS(Ta=25℃) 2SD2237 isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD2237 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA, IB= 0 100 V V(BR)CBO Collector-Base Breakdown Voltage IC= 50μA; IE=0 100 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 2mA; IC=0 5 V VCE(sat) Collector-Emitter Saturation Voltage IC= 5A, IB= 20mA 2.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 5A, IB= 20mA 2.5 V 10 μA 2 mA ICBO Collector Cutoff current IEBO Emitter Cutoff current hFE DC Current Gain CONDITIONS B m e s isc w. isc Website：www.iscsemi.cn TYP. B VCB= 100V, IE= 0 w w MIN VEB= 5V, IC= 0 IC= 2A; VCE= 3V n c . i 2000 MAX 20000 UNIT