isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BUL216 DESCRIPTION ·Collector–Emitter Sustaining Voltage : VCEO(SUS) = 800V(Min.) ·High Switching Speed APPLICATIONS ·Designed for use in lighting applications and low cost switchmode power supplies. n c . i m e ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VCES Collector-Emitter Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage VALUE s c s .i w w w IC Collector Current-Continuous ICM UNIT 1600 800 9 V V V 4 A Collector Current-peak tp<5ms 6 A IB Base Current-Continuous 2 A IBM Base Current-peak tp<5ms 4 A PC Collector Power Dissipation TC=25℃ 90 W Ti Junction Temperature 150 ℃ -65~150 ℃ B Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.39 ℃/W Rth j-A Thermal Resistance,Junction to Ambient 62.5 ℃/W isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BUL216 ELECTRICAL CHARACTERISTICS TC =25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA; L= 25mH V(BR)EBO Emitter-Base Breakdown Voltage IE= 10mA; IC= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 1A; IB= 0.2A 1.0 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 2A; IB= 0.66A 3.0 V VBE(sat)-1 Base-Emitter Saturation Voltage IC= 1A; IB= 0.2A 1.2 V VBE(sat)-2 Base-Emitter Saturation Voltage IC= 2A; IB= 0.66A 1.2 V ICES Collector Cutoff Current VCE= 1600V; VBE= 0 VCE= 1600V; VBE= 0, TC= 125℃ 0.1 0.5 mA ICEO Collector Cutoff Current 0.25 mA hFE-1 DC Current Gain hFE-2 DC Current Gain ts Storage Time tf Fall Time isc Website：www.iscsemi.cn UNIT 9 V B B n c . i m e VCE= 800V; IB= 0 IC= 0.4A; VCE= 5V 12 IC= 10mA; VCE= 5V 10 IC= 1.5A; VCL= 250V; L= 200μH; IB1= 0.5A; VBE(off)= -5V; RBB= 0Ω MAX V B s c s .i TYP. 800 B w w w Switching Times, Inductive Load MIN 40 3.3 μs 0.72 μs