isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor TIP514 DESCRIPTION ·Continuous Collector Current-IC= -5A ·Collector-Emitter Breakdown Voltage: V(BR)CEO= -150V(Min.) ·Collector Power Dissipation: PC= 20W @TC≤ 100℃ APPLICATIONS ·Designed for power amplifier and high speed switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -150 V VCEO Collector-Emitter Voltage -150 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -5 A ICM Collector Current-Peak -7.5 A IB Base Current-Continuous -2 A Collector Power Dissipation @Ta= 25℃ 2 Collector Power Dissipation @TC≤100℃ 20 TJ Junction Temperature 200 ℃ Tstg Storage Temperature -65~200 ℃ B PC W THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case isc Website：www.iscsemi.cn MAX UNIT 5.0 ℃/W isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor TIP514 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage IC= -30mA; IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -2.5A; IB= -0.25A -1.0 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -5A; IB= -0.5A -2.0 V VBE(on) Base-Emitter On Voltage IC= -5A; VCE= -4V -2.2 V ICEO Collector Cutoff Current VCE= -75V; IB= 0 -0.3 mA ICES Collector Cutoff Current VCE= -150V; VBE= 0 VCE= -75V; VBE= 0, TC=150℃ -1.0 -2.0 mA IEBO Emitter Cutoff Current VEB= -2.5V; IC= 0 VEB= -5V; IC= 0 -0.1 -1.0 mA hFE-1 DC Current Gain IC= -2.5A; VCE= -4V 30 hFE-2 DC Current Gain IC= -5A; VCE= -4V 15 isc Website：www.iscsemi.cn CONDITIONS MIN -150 B B B 2 MAX UNIT V 150