isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BUX47A DESCRIPTION ·Collector-Emitter Sustaining Voltage: VCEO(SUS)= 450V (Min) ·Fast Switching Speed APPLICATIONS Designed for high voltage, fast switching applications. Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCER Collector-Emitter Voltage (RBE= 10Ω) 1000 V VCES Collector-Emitter Voltage (VBE= 0) 900 V VCEO Collector-Emitter Voltage 450 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 9 A ICM Collector Current-Peak tp< 5ms 15 A IB Base Current-Continuous 8 A IBM Base Current-peak tp< 5ms 10 A PC Collector Power Dissipation @TC=25℃ 125 W Tj Junction Temperature 175 ℃ -65~175 ℃ B Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.2 ℃/W isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BUX47A ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.2A; IB= 0; L= 25mH V(BR)EBO Emitter-Base Breakdown Voltage IE= 50mA; IC= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage VCE(sat)-2 MIN MAX 450 V 30 V IC= 5A; IB= 1A 1.5 V Collector-Emitter Saturation Voltage IC= 8A; IB= 2.5A 3.0 V Base-Emitter Saturation Voltage IC= 5A; IB= 1A 1.6 V ICER Collector Cutoff Current VCE= 850V; RBE= 10Ω VCE= 850V; RBE= 10Ω; TC=125℃ 0.4 3 mA ICEV Collector Cutoff Current VCE=850V; VBE= -2.5V VCE=850V; VBE= -2.5V; TC=125℃ 0.15 1.5 mA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 1.0 mA 0.7 μs 3.0 μs 0.8 μs VBE(sat) B B B 7 UNIT Switching times Resistive Load ton Turn-on Time ts Storage Time tf Fall Time isc Website：www.iscsemi.cn IC= 5A; IB1=-IB2= 1A; VCC= 150V