ISC BUW13A

Inchange Semiconductor
Product Specification
BUW13 BUW13A
Silicon NPN Power Transistors
DESCRIPTION
・With TO-3PN package
・High voltage,high speed
APPLICATIONS
・Converters
・Inverters
・Switching regulators
・Motor control systems
PINNING (See Fig.2)
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
Fig.1 simplified outline (TO-3PN) and symbol
导体
半
电
Absolute maximum ratings(Ta=25℃)
SYMBOL
固
VCBO
PARAMETER
CONDITIONS
BUW13
Open emitter
BUW13A
ANG
VEBO
INCH
IC
VCEO
Collector-emitter voltage
Emitter-base voltage
C
U
D
ON
IC
M
E
ES
Collector-base voltage
BUW13
TOR
VALUE
850
V
1000
400
Open base
BUW13A
UNIT
V
450
Open collector
9
V
Collector current
15
A
ICM
Collector current-peak
30
A
IB
Base current
6
A
IBM
Base current-peak
9
A
PT
Total power dissipation
175
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-65~175
℃
TC=25℃
Inchange Semiconductor
Product Specification
BUW13 BUW13A
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BUW13
MIN
VCEO(SUS)
IC=0.1A ; IB=0; L=25mH
UNIT
V
450
BUW13
VBEsat
MAX
400
Collector-emitter
sustaining voltage
BUW13A
VCEsat
TYP.
IC=10A; IB=2A
Collector-emitter
saturation voltage
BUW13A
IC=8A; IB=1.6A
BUW13
IC=10A; IB=2A
Base-emitter
saturation voltage
BUW13A
1.5
V
1.6
V
IC=8A; IB=1.6A
ICES
Collector cut-off current
VCE=Rated VCES; VBE=0
TC=125℃
1.0
4.0
mA
IEBO
Emitter cut-off current
VEB=9V; IC=0
10
mA
hFE-1
DC current gain
IC=20mA ; VCE=5V
DC current gain
IC=1.5A ; VCE=5V
hFE-2
导体
半
电
固
Switching times resistive load
Turn-on time
ts
Storage time
tf
IN
Fall time
OND
IC
M
E
ES
G
N
A
CH
ton
For BUW13
IC=10A ;IB1=-IB2=2A
For BUW13A
IC=8A ;IB1=-IB2=1.6A
2
R
O
T
UC
10
10
35
35
1.0
μs
4.0
μs
0.8
μs
Inchange Semiconductor
Product Specification
BUW13 BUW13A
Silicon NPN Power Transistors
PACKAGE OUTLINE
导体
半
电
固
D
N
O
IC
R
O
T
UC
M
E
S
GE
N
A
H
INC
Fig.2 Outline dimensions(unindicated tolerance:±0.10mm)
3