Inchange Semiconductor Product Specification BUT18F BUT18AF Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-220Fa package ・High voltage ,high speed APPLICATIONS ・Converters ・Inverters ・Switching regulators ・Motor control systems PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-220Fa) and symbol 导体 半 电 Absolute maximum ratings (Tc=25℃) SYMBOL 固 VCBO PARAMETER CONDITIONS BUT18F Open emitter BUT18AF ANG VEBO INCH IC VCEO Collector-emitter voltage Emitter-base voltage C U D ON IC M E ES Collector-base voltage BUT18F TOR VALUE 850 V 1000 400 Open base BUT18AF UNIT V 450 Open collector 9 V Collector current 6 A ICM Collector current-peak 12 A IB Base current 3 A IBM Base current-peak 6 A Ptot Total power dissipation 33 W TC=25℃ Tj Junction temperature 150 ℃ Tstg Storage temperature -65~150 ℃ Inchange Semiconductor Product Specification BUT18F BUT18AF Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BUT18F VCEO(SUS) Collector-emitter sustaining voltage MIN TYP. MAX UNIT 400 IC=0.1A; IB=0;L=25mH V 450 BUT18AF VCEsat Collector-emitter saturation voltage IC=4A; IB=0.8A 1.5 V VBEsat Base-emitter saturation voltage IC=4A; IB=0.8A 1.3 V BUT18F VCE=850V ;VBE=0 Tj=125℃ 1.0 2.0 BUT18AF VCE=1000V ;VBE=0 Tj=125℃ 1.0 2.0 VEB=9V; IC=0 10 ICES Collector cut-off current IEBO Emitter cut-off current hFE-1 DC current gain 导体 半 电 mA IC=10mA ; VCE=5V 10 DC current gain IC=1A ; VCE=5V 10 Switching times resistive load M E S GE hFE-2 固 ton Turn-on time ts Storage time tf Fall time N A H INC 2 35 R O T UC D N O IC IC=4A; IB1=-IB2=0.8A VCC=250V mA 35 1.0 μs 4.0 μs 0.8 μs Inchange Semiconductor Product Specification BUT18F BUT18AF Silicon NPN Power Transistors PACKAGE OUTLINE 导体 半 电 固 R O T UC D N O IC M E S GE N A H INC Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm) 3