ISC BUW13AF

Inchange Semiconductor
Product Specification
BUW13F BUW13AF
Silicon NPN Power Transistors
DESCRIPTION
・With TO-3PFa package
・High voltage;high speed
APPLICATIONS
・Converters
・Inverters
・Switching regulators
・Motor control systems
PINNING (See Fig.2)
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
l
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
BUW13F
VCBO
Collector-base voltage
400
Open base
BUW13AF
VEBO
Emitter-base voltage
V
1000
BUW13F
Collector-emitter voltage
UNIT
850
Open emitter
BUW13AF
VCEO
VALUE
V
450
Open collector
9
V
IC
Collector current
15
A
ICM
Collector current-peak
30
A
IB
Base current
6
A
IBM
Base current-peak
9
A
PT
Total power dissipation
50
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-65~150
℃
MAX
UNIT
35
K/W
TC=25℃
THERMAL CHARACTERISTICS
SYMBOL
Rth j-a
PARAMETER
Thermal resistance from junction to ambient
Inchange Semiconductor
Product Specification
BUW13F BUW13AF
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BUW13F
VCEO(SUS)
Collector-emitter
sustaining voltage
MAX
IC=0.1A ; IB=0; L=25mH
BUW13F
VBEsat
TYP.
UNIT
400
BUW13AF
VCEsat
MIN
V
450
IC=10A; IB=2A
Collector-emitter
saturation voltage
BUW13AF
IC=8A; IB=1.6A
BUW13F
IC=10A; IB=2A
BUW13AF
IC=8A; IB=1.6A
Base-emitter
saturation voltage
1.5
V
1.6
V
ICES
Collector cut-off current
VCE=Rated VCES; VBE=0
Tj=125℃
1.0
4.0
mA
IEBO
Emitter cut-off current
VEB=9V; IC=0
10
mA
hFE-1
DC current gain
IC=20mA ; VCE=5V
10
35
hFE-2
DC current gain
IC=1.5A ; VCE=5V
10
35
Switching times resistive load
ton
Turn-on time
1.0
μs
4.0
μs
0.8
μs
For BUW13F
IC=10A ;IB1=-IB2=-2A
ts
Storage time
For BUW13AF
IC=8A ;IB1=-IB2=-1.6A
tf
Fall time
2
Inchange Semiconductor
Product Specification
BUW13F BUW13AF
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions(unindicated tolerance:±0.30mm)
3