Inchange Semiconductor Product Specification BUW13F BUW13AF Silicon NPN Power Transistors DESCRIPTION ・With TO-3PFa package ・High voltage;high speed APPLICATIONS ・Converters ・Inverters ・Switching regulators ・Motor control systems PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Collector 3 Emitter l Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS BUW13F VCBO Collector-base voltage 400 Open base BUW13AF VEBO Emitter-base voltage V 1000 BUW13F Collector-emitter voltage UNIT 850 Open emitter BUW13AF VCEO VALUE V 450 Open collector 9 V IC Collector current 15 A ICM Collector current-peak 30 A IB Base current 6 A IBM Base current-peak 9 A PT Total power dissipation 50 W Tj Junction temperature 150 ℃ Tstg Storage temperature -65~150 ℃ MAX UNIT 35 K/W TC=25℃ THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER Thermal resistance from junction to ambient Inchange Semiconductor Product Specification BUW13F BUW13AF Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BUW13F VCEO(SUS) Collector-emitter sustaining voltage MAX IC=0.1A ; IB=0; L=25mH BUW13F VBEsat TYP. UNIT 400 BUW13AF VCEsat MIN V 450 IC=10A; IB=2A Collector-emitter saturation voltage BUW13AF IC=8A; IB=1.6A BUW13F IC=10A; IB=2A BUW13AF IC=8A; IB=1.6A Base-emitter saturation voltage 1.5 V 1.6 V ICES Collector cut-off current VCE=Rated VCES; VBE=0 Tj=125℃ 1.0 4.0 mA IEBO Emitter cut-off current VEB=9V; IC=0 10 mA hFE-1 DC current gain IC=20mA ; VCE=5V 10 35 hFE-2 DC current gain IC=1.5A ; VCE=5V 10 35 Switching times resistive load ton Turn-on time 1.0 μs 4.0 μs 0.8 μs For BUW13F IC=10A ;IB1=-IB2=-2A ts Storage time For BUW13AF IC=8A ;IB1=-IB2=-1.6A tf Fall time 2 Inchange Semiconductor Product Specification BUW13F BUW13AF Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions(unindicated tolerance:±0.30mm) 3