Inchange Semiconductor Product Specification BUW13W BUW13AW Silicon NPN Power Transistors DESCRIPTION ・With TO-247 package ・High voltage,high speed APPLICATIONS ・Converters ・Inverters ・Switching regulators ・Motor control systems PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-247) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS BUW13W VCBO Collector-base voltage 400 Open base BUW13AW VEBO Emitter-base voltage V 1000 BUW13W Collector-emitter voltage UNIT 850 Open emitter BUW13AW VCEO VALUE V 450 Open collector 9 V IC Collector current 15 A ICM Collector current-peak 30 A IB Base current 6 A IBM Base current-peak 9 A PT Total power dissipation 175 W Tj Junction temperature 150 ℃ Tstg Storage temperature -65~150 ℃ MAX UNIT 0.7 K/W TC=25℃ THERMAL CHARACTERISTICS SYMBOL Rth j-mb PARAMETER Thermal resistance from junction to mounting base Inchange Semiconductor Product Specification BUW13W BUW13AW Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BUW13W VCEO(SUS) Collector-emitter sustaining voltage MAX IC=0.1A ; IB=0; L=25mH BUW13W VBEsat TYP. UNIT 400 BUW13AW VCEsat MIN V 450 IC=10A; IB=2A Collector-emitter saturation voltage BUW13AW IC=8A; IB=1.6A BUW13W IC=10A; IB=2A BUW13AW IC=8A; IB=1.6A Base-emitter saturation voltage 1.5 V 1.6 V ICES Collector cut-off current VCE=Rated VCES; VBE=0 Tj=125℃ 1.0 4.0 mA IEBO Emitter cut-off current VEB=9V; IC=0 10 mA hFE-1 DC current gain IC=20mA ; VCE=5V 10 35 hFE-2 DC current gain IC=1.5A ; VCE=5V 10 35 Switching times resistive load ton Turn-on time ts Storage time tf Fall time For BUW13W IC=10A ;IB1=-IB2=-2A For BUW13AW IC=8A ;IB1=-IB2=-1.6A 2 1.0 μs 4.0 μs 0.8 μs Inchange Semiconductor Product Specification BUW13W BUW13AW Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3