SAVANTIC BUW13AF

SavantIC Semiconductor
Product Specification
BUW13F BUW13AF
Silicon NPN Power Transistors
DESCRIPTION
·With TO-3PFa package
·High voltage;high speed
APPLICATIONS
·Converters
·Inverters
·Switching regulators
·Motor control systems
PINNING (See Fig.2)
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
l
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
Emitter-base voltage
CONDITIONS
BUW13F
BUW13AF
BUW13F
BUW13AF
Open emitter
Open base
Open collector
VALUE
850
1000
400
450
UNIT
V
V
9
V
IC
Collector current
15
A
ICM
Collector current-peak
30
A
IB
Base current
6
A
IBM
Base current-peak
9
A
PT
Total power dissipation
50
W
Tj
Junction temperature
150
Tstg
Storage temperature
-65~150
TC=25
THERMAL CHARACTERISTICS
SYMBOL
Rth j-a
PARAMETER
Thermal resistance from junction to ambient
MAX
UNIT
35
K/W
SavantIC Semiconductor
Product Specification
BUW13F BUW13AF
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
VCEO(SUS)
VCEsat
VBEsat
PARAMETER
Collector-emitter
sustaining voltage
Collector-emitter
saturation voltage
Base-emitter
saturation voltage
CONDITIONS
BUW13F
MIN
TYP.
MAX
400
V
IC=0.1A ; IB=0; L=25mH
450
BUW13AF
BUW13F
UNIT
IC=10A; IB=2A
BUW13AF
IC=8A; IB=1.6A
BUW13F
IC=10A; IB=2A
BUW13AF
IC=8A; IB=1.6A
1.5
V
1.6
V
ICES
Collector cut-off current
VCE=Rated VCES; VBE=0
Tj=125
1.0
4.0
mA
IEBO
Emitter cut-off current
VEB=9V; IC=0
10
mA
hFE-1
DC current gain
IC=20mA ; VCE=5V
10
35
hFE-2
DC current gain
IC=1.5A ; VCE=5V
10
35
Switching times resistive load
ton
Turn-on time
ts
Storage time
tf
Fall time
For BUW13F
IC=10A ;IB1=-IB2=-2A
For BUW13AF
IC=8A ;IB1=-IB2=-1.6A
2
1.0
µs
4.0
µs
0.8
µs
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
BUW13F BUW13AF
PACKAGE OUTLINE
Fig.2 Outline dimensions(unindicated tolerance:±0.30mm)
3