SavantIC Semiconductor Product Specification BUW13F BUW13AF Silicon NPN Power Transistors DESCRIPTION ·With TO-3PFa package ·High voltage;high speed APPLICATIONS ·Converters ·Inverters ·Switching regulators ·Motor control systems PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Collector 3 Emitter l Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER VCBO Collector-base voltage VCEO Collector-emitter voltage VEBO Emitter-base voltage CONDITIONS BUW13F BUW13AF BUW13F BUW13AF Open emitter Open base Open collector VALUE 850 1000 400 450 UNIT V V 9 V IC Collector current 15 A ICM Collector current-peak 30 A IB Base current 6 A IBM Base current-peak 9 A PT Total power dissipation 50 W Tj Junction temperature 150 Tstg Storage temperature -65~150 TC=25 THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER Thermal resistance from junction to ambient MAX UNIT 35 K/W SavantIC Semiconductor Product Specification BUW13F BUW13AF Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL VCEO(SUS) VCEsat VBEsat PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage CONDITIONS BUW13F MIN TYP. MAX 400 V IC=0.1A ; IB=0; L=25mH 450 BUW13AF BUW13F UNIT IC=10A; IB=2A BUW13AF IC=8A; IB=1.6A BUW13F IC=10A; IB=2A BUW13AF IC=8A; IB=1.6A 1.5 V 1.6 V ICES Collector cut-off current VCE=Rated VCES; VBE=0 Tj=125 1.0 4.0 mA IEBO Emitter cut-off current VEB=9V; IC=0 10 mA hFE-1 DC current gain IC=20mA ; VCE=5V 10 35 hFE-2 DC current gain IC=1.5A ; VCE=5V 10 35 Switching times resistive load ton Turn-on time ts Storage time tf Fall time For BUW13F IC=10A ;IB1=-IB2=-2A For BUW13AF IC=8A ;IB1=-IB2=-1.6A 2 1.0 µs 4.0 µs 0.8 µs SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BUW13F BUW13AF PACKAGE OUTLINE Fig.2 Outline dimensions(unindicated tolerance:±0.30mm) 3